sot223 pnp silicon planar medium power transistor issue 3 - november 1995 j complementary type fzt491 partmarking detail - FZT591 absolute maximum ratings. parameter symbol value unit collector-base voltage v cbo -80 v collector-emitter voltage v ceo -60 v emitter-base voltage v ebo -5 v peak pulse current i cm -2 a continuous collector current i c -1 a base current i b -200 ma power dissipation at t amb =25c p tot 2w operating and storage temperature range t j :t stg -55 to +150 c electrical characteristics (at t amb = 25c). parameter symbol min. max. unit conditions. breakdown voltages v (br)cbo -80 v i c =-100 m a, i e =0 v (br)ceo -60 v i c =-10ma, i b =0* v (br)ebo -5 v i e =-100 m a, i c =0 collector cut-off current i cbo -100 na v cb =-60v emitter cut-off current i ebo -100 na v eb =-4v, i c =0 collector-emitter cut-off current i ces -100 na v ces =-60v emitter saturation voltages v ce(sat) -0.3 -0.6 v v i c =-500ma,i b =-50ma* i c =-1a, i b =-100ma* v be(sat) -1.2 v i c =-1a, i b =-100ma* base-emitter turn-on voltage v be(on) -1.0 v i c =-1a, v ce =-5v* static forward current transfer ratio h fe 100 100 80 15 300 i c =-1ma, v ce =-5v* i c =-500ma, v ce =-5v* i c =-1a, v ce =-5v* i c =-2a, v ce =-5v* transition frequency f t 150 mhz i c =-50ma, v ce =-10v f=100mhz output capacitance c obo 10 pf v cb =-10v, f=1mhz *measured under pulsed conditions. pulse width=300 m s. duty cycle 2% for typical characteristics graphs see fmmt591 datasheet FZT591 3 - 195 c c e b
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